1. GENERAL DESCRIPTION
W9825G6EH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. W9825G6EH delivers a data bandwidth of up to 166M words per second (-6). To fully comply with the personal computer industrial standard, W9825G6EH is sorted into the following speed grades: -6/-6C and -75. The - 6 is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The – 6C is compliant to the 166MHz/CL3 specification. The -75 is compliant to the 133MHz/CL3 specification. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9825G6EH is ideal for main memory in high performance applications.
2. FEATURES
• 3.3V ± 0.3V Power Supply
• Up to 166 MHz Clock Frequency
• 4,194,304 Words × 4 Banks × 16 Bits Organization
• Self Refresh Mode: Standard and Low Power
• CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8 and Full Page
• Burst Read, Single Writes Mode
• Byte Data Controlled by LDQM, UDQM
• Power Down Mode
• Auto-precharge and Controlled Precharge
• 8K Refresh Cycles/64 mS
• Interface: LVTTL • Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
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Hubungi : Magenta Electronics
Telp : 021-74702987
Hp : 082177773323-087884527144
Pin BB : 54A7F197
Email : odang@magentaelectronics.com
Website : www.magentaelectronics.com
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