Harga Rp.95.000/pcc
Minimal Order 5pcs. Indent 1 Minggu
FLASH MEMORY
CMOS 8M (1M × 8/512K × 16) BIT
MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
■ FEATURES
• Single 5.0 V read, write, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF)
• Minimum 100,000 write/erase cycles
• High performance 55 ns maximum access time
• Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture T = Top sector B = Bottom sector
• Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
• Low Vcc write inhibit ≤ 3.2 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data in another sector within the same device
• Hardware RESET pin Resets internal state machine to the read mode
• Sector protection Hardware method disables any combination of sectors from write or erase operations
• Temporary sector unprotection Temporary sector unprotection via the RESET pin.
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Hubungi : Magenta Electronics
Telp : 082177773323
Email : odang@magentaelectronics.com
website : www.magentaelectronics.com
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